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参数资料
| 型号： | HU603AL |
| 厂商： | HSMC CORP. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 1/5页 |
| 文件大小： | 60K |
| 代理商： | HU603AL |
HI-SINCERITY
MICROELECTRONICS CORP.
HU603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
HSMC Product Specification
Description
This very high density process has been especially tailored to minimize on-
state resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are needed.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Operating and Storage Temperature................................................................................ -65 ~ +175
°
C
Maximum Power Dissipation
Total Power Dissipation at Tc=25
°
C ............................................................................................... 60 W
Derate Above 25
°
C................................................................................................................ 0.4 W /
°
C
Maximum Voltages and Currents
Drain-Source Voltage...................................................................................................................... 30 V
Gate-Source Voltage -Continuous.................................................................................................
±
20 V
Drain Current -Continuous .............................................................................................................. 30 A
Drain Current -Pulsed ................................................................................................................... 100 A
Thermal Resistance, Junction-to-Case .................................................................................. 2.5
°
C / W
Thermal Resistance, Junction-to-Ambient............................................................................ 62.5
°
C / W
Electrical Characteristics
Off Characteristics
Symbol
BV
DSS
I
DSS
+I
GSS
-I
GSS
On Characteristics
Parameter
Condition
Min
30
-
-
-
Typ
-
-
-
-
Max
-
10
100
-100
Unit
V
uA
nA
nA
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage ,Forward
Gate-Body Leakage ,Reverse
V
GS
=0V, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
DS
=V
GS
, I
D
=10mA
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=10A
V
GS
=10V, V
DS
=10V
V
GS
=4.5V, V
DS
=10V
V
DS
=10V, I
D
=25A
1.1
1.4
-
-
60
15
-
-
-
3
3
V
GS(TH)
Gate Threshold Voltage
V
0.018 0.022
0.029 0.040
-
-
26
R
DS
(on)
Static Drain-Source On-Resistance
-
-
-
I
DS
(on)
On-State Drain Current
A
g
FS
Dynamic Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
S
-
-
-
1100
600
180
-
-
-
pF
pF
pF
V
DS
=15V, V
GS
=0V
f=1.0Mhz
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