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参数资料
| 型号： | HU603AL |
| 厂商： | HSMC CORP. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 3/5页 |
| 文件大小： | 60K |
| 代理商： | HU603AL |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 3/5
HSMC Product Specification
Drain Current Variation & Gate Voltage &
Temperature
0
10
20
30
40
50
0
1
2
3
4
5
6
Gate-Source Voltage (V)
D
TJ=125°C
TJ= 25°C
Sub-Threshold Drain Current Variation & Gate
Voltage & Temperature
0
0.01
0.02
0.03
0.04
0.05
0.06
0.5
1.0
1.5
2.0
2.5
Gate-Source Voltage (V)
D
TJ=125°C
TJ=25°C
Gate Threshold Variation & Temperature
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
25
50
75
100
125
150
Junction Temperature (°C)
G
ID=10mA
ID= 250uA
ID=1mA
Capacitance Characteristics
0
500
1000
1500
2000
0
5
10
15
20
25
30
Drain-Source Voltage (V)
C
Ciss
Crss
Coss
Breakdown Voltage Variation & Temperature
0.98
1
1.02
1.04
1.06
1.08
1.1
25
50
75
100
125
150
Junction Temperature (°C)
N
V
Body Diode Forward Voltage Variation &
Current & Temperature
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
Body Diode Forward Voltage (V)
R
TJ=125°C
TJ= 25°C
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