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参数资料
| 型号： | HU603AL |
| 厂商： | HSMC CORP. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 60K |
| 代理商： | HU603AL |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/5
HSMC Product Specification
Switching Characteristics
Symbol
Turn-On Delay Time
T(on)
Turn-On Rise Time
Turn-Off Delay Time
T(off)
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain-Source Diode Characteristics And Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
Parameter
Condition
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
30
110
150
130
45
10
10
Unit
ns
ns
ns
ns
nC
nC
nC
V
DS
=15V, I
D
=25A
V
GS
=10V, R
GEN
=24
V
DS
=10V, I
D
=25A,
V
GS
=10V
-
-
-
-
25
1.3
A
V
V
GS
=0V, I
S
=25A
Characteristics Curve
On-Region Characteristic
0
20
40
60
80
100
0
1
2
3
4
5
Drain-Source Voltage (V)
D
VGS=10V 8V
5V
6V
7V
3V
4.5V
4V
On-Resistance Variation With Gate Voltage &
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
Drain Current (A)
N
R
8V
7V
6V
5 V
4.5V
VGS= 4V
10V
On Resistance Variation & Temperature
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
25
50
75
100
125
150
Junction Temperature (°C)
N
ID=25A
VGS=10V
On-Resistance Variation & Drain Current &
Temperature
0.5
1
1.5
2
2.5
0
20
40
60
80
Drain Current (A)
N
R
VGS=10V
TJ=125°C
TJ=25°C
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