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参数资料
| 型号： | HU603AL |
| 厂商： | HSMC CORP. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 4/5页 |
| 文件大小： | 60K |
| 代理商： | HU603AL |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 4/5
HSMC Product Specification
Trancient Thermal Response Curve
0.01
0.1
1
0.1
1
10
100
1000
Time (ms)
N
R
0.01
0.1
0.05
0.02
0.2
0.5
Single Pulse
R
θ
JC(t) = r(t) * R
θ
JC(t)
R
θ
JC =2.5
°
C / W
t2
P(pk)
t1
TJ-TC=P* R
θ
JC(t)
Duty Cycle,D=t1/t2
Transductance Variation & Drain Current &
Temperature
0
5
10
15
20
25
30
0
10
20
Drain Current (A)
30
40
50
T
TJ=25°C
TJ=125°C
Maximum Safe Operating Area
1
10
100
0.1
1
10
100
Drain-Source Voltage (V)
D
VGS=20V
Single Pulse
TC=25°C
Rds(on) Line
Dc
100ms
10ms
1ms
1us
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