参数资料
型号: HTL195
厂商: HSMC CORP.
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 进步党外延平面晶体管
文件页数: 3/3页
文件大小: 35K
代理商: HTL195
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6452
Issued Date : 1993.02.10
Revised Date : 2002.04.18
Page No. : 3/3
HTL195
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Min.
4.33
4.33
12.70
0.36
-
3.36
Inches
Millimeters
Min.
0.36
-
-
-
-
-
DIM
Min.
0.1704
0.1704
0.5000
0.0142
-
0.1323
Max.
0.1902
0.1902
-
0.0220
*0.0500
0.1480
Max.
4.83
4.83
-
0.56
*1.27
3.76
DIM
Min.
0.0142
-
-
-
-
-
Max.
0.0220
*0.1000
*0.0500
*5
°
*2
°
*2
°
Max.
0.56
*2.54
*1.27
*5
°
*2
°
*2
°
A
B
C
D
E
F
G
H
I
α
1
α
2
α
3
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
α
1
E
F
α
2
α
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
H
1
L
9
5
Date Code
Control Code
T
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