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参数资料
| 型号： | HUF75329D3S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 20A DPAK |
| 标准包装： | 1,800 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 1060pF @ 25V |
| 功率 - 最大： | 128W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
HUF75329D3S
Data Sheet
N-Channel UltraFET Power MOSFET
55 V, 20 A, 26 m?
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75329.
Ordering Information
October 20 13
Features
? 20A, 55V
? Simulation Models
- Temperature Compensated PSPICE? and SABER?
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PART NUMBER
HUF75329D3ST
PACKAGE
TO- 252AA
BRAND
75329D
D
G
S
Packaging
JEDEC TO-252AA
DRAIN
GATE
(FLANGE)
SOURCE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
?2001 Fairchild Semiconductor Corporation
HUF75329D3S Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75329D3S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75329D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| HUF75329D3ST_R4820 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75329G3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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