参数资料
型号: HUF75329D3S
厂商: Fairchild Semiconductor
文件页数: 5/10页
文件大小: 0K
描述: MOSFET N-CH 55V 20A DPAK
标准包装: 1,800
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 26 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 65nC @ 20V
输入电容 (Ciss) @ Vds: 1060pF @ 25V
功率 - 最大: 128W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 管件
HUF75329D3S
Typical Performance Curves
(Continued)
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 20A
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.2
I D = 250 μ A
1500
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C OSS ≈ C DS + C GD
1.1
1200
C ISS
C RSS = C GD
900
1.0
600
0.9
300
C OSS
C RSS
0.8
-80
-40
0
40
80
120
160
200
0
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
10
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
0
V DD = 30V
I D = 20A
I D = 12.5A
I D = 5A
0
5
10
15
20
25
30
35
Q g , GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
?2001 Fairchild Semiconductor Corporation
HUF75329D3S Rev. C0
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