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参数资料
| 型号： | HUF75639G3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 56A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 56A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 56A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2000pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | HUF75639G3-ND HUF75639G3FS |
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
PSPICE Electrical Model
SUBCKT HUF75639 2 1 3 ;
CA 12 8 2.8e-9
CB 15 14 2.65e-9
CIN 6 8 1.9e-9
rev Oct. 98
LDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
RSLC1
RLDRAIN
DRAIN
2
EBREAK 11 7 17 18 110
51
DBREAK
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
RSLC2
5
51
ESLC
11
9
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 2e-9
LGATE 1 9 1e-9
LSOURCE 3 7 0.47e-9
RLGATE 1 9 10
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
RLDRAIN 2 5 20
RLSOURCE 3 7 4.69
CIN
8
7
LSOURCE
SOURCE
3
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
RSOURCE
RLSOURCE
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RDRAIN 50 16 RDRAINMOD 1.3e-2
RGATE 9 20 0.7
S1B
S2B
RVTEMP
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 4.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
19
-
VBAT
+
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
RVTHRES
22
VBAT 22 19 DC 1
ESLC 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*115),4))}
.MODEL DBODYMOD D (IS = 1.4e-12 RS = 3.3e-3 XTI = 4.7 TRS1 = 2e-3 TRS2 = 0.1e-5 CJO = 3.3e-9 TT = 6.1e-8 M = 0.7)
.MODEL DBREAKMOD D (RS = 3.5e- 1TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 2.2e- 9IS = 1e-3 0N = 10 M = 0.95 vj = 1.0)
.MODEL MMEDMOD NMOS (VTO = 3.5 KP = 4.8 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u Rg = 0.7)
.MODEL MSTROMOD NMOS (VTO = 3.97 KP = 56.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO =3.11 KP = 0.085 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 0.8e- 3TC2 = 1e-6)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 1.75e-5)
.MODEL RSLCMOD RES (TC1 = 2.8e-3 TC2 = 14e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -2.0e-3 TC2 = -1.75e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e- 3TC2 = 0.05e-9)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -6.0 VOFF = -3.5)
VON = -3.5 VOFF = -6.0)
VON = -2.5 VOFF = 4.95)
VON = 4.95 VOFF = -2.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75639G3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75639G3_Q | 功能描述:MOSFET 56a 100V N-Ch UltraFET .25 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75639P3 | 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75639P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB |
| HUF75639P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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