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参数资料
| 型号： | HUF75639S3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 56A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 56A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 56A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2000pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | HUF75639S3STDKR |
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Typical Performance Curves
(Continued)
1000
100
V GS = 10V
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T C
I = I 25
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
1000
T J = MAX RATED
T C = 25 o C
300
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100
10
100 μ s
1ms
STARTING T J = 150 o C
STARTING T J = 25 o C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
V DSS(MAX) = 100V
10ms
1
1
10
100
200
10
0.001
0.01
0.1
1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
V GS = 6V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
175 o C
80
V GS = 20V
80
V DD = 15V
60
40
V GS = 10V
V GS = 7V
V GS = 5V
60
40
20
0
0
1
2
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
4 5 6
7
20
0
0
1.5
25 o C
3.0
4.5
-55 o C
6.0
7.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
?2001 Fairchild Semiconductor Corporation
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75639S3ST_Q | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639S3ST_S2515 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75639S3STNL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75645P3 | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75645P3_Q | 功能描述:MOSFET 75a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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