参数资料
型号: HUF75842S3ST
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 150V 43A D2PAK
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Product Discontinuation 14/Mar/2011
标准包装: 800
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 43A
开态Rds(最大)@ Id, Vgs @ 25° C: 42 毫欧 @ 43A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 175nC @ 20V
输入电容 (Ciss) @ Vds: 2730pF @ 25V
功率 - 最大: 230W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 带卷 (TR)
HUF75842P3
Typical Performance Curves
(Continued)
300
100
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
300
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
10
100 μ s
STARTING T J = 25 o C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10ms
STARTING T J = 150 o C
1
10
0.001
0.01
0.1
1
1
10 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
300
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
80
PULSE DURATION = 80 μ s
80
60
40
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 175 o C
60
40
V GS = 10V
V GS = 6V
V GS =5V
20
0
T J = -55 o C
T J = 25 o C
20
0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
2
3 4
5
6
0
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
V GS = V DS , I D = 250 μ A
2.5
2.0
1.5
1.0
0.5
0
V GS = 10V, I D = 43A
1.0
0.8
0.6
-80
-40
0 40 80 120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
?2001 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUF75842P3 Rev. C0
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