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参数资料
| 型号： | HUF75842S3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 43A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 800 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 43A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 43A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 175nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2730pF @ 25V |
| 功率 - 最大： | 230W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
HUF75842P3
PSPICE Electrical Model
.SUBCKT HUF75842 2 1 3 ;
CA 12 8 4.10e-9
CB 15 14 4.10e-9
CIN 6 8 2.50e-9
rev 13 October 1999
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
LDRAIN
DRAIN
2
ESLC
EBREAK 11 7 17 18 157.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
RSLC2
RSLC1
51
5
51
DBREAK
11
RLDRAIN
9
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 4.86e-9
LSOURCE 3 7 2.01e-9
MMED 16 6 8 8 MMEDMOD
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
CIN
8
7
LSOURCE
SOURCE
3
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.72e-2
RSOURCE
RLSOURCE
RGATE 9 20 0.73
RLDRAIN 2 5 10
RLGATE 1 9 48.6
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLSOURCE 3 7 20.1
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.58e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
S1B
13
+
EGS
6
8
S2B
CB
+
EDS
5
8
14
IT
RVTEMP
19
-
VBAT
+
S1A
S1B
S2A
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
-
-
8
RVTHRES
22
S2B
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*88),3.5))}
.MODEL DBODYMOD D (IS = 2.25e-12 RS = 2.45e-3 IFK=14 XTI = 5 TRS1 = 2.7e-3 TRS2 = 0 CJO = 2.60e-9 TT = 1.22e-7 M = 0.55)
.MODEL DBREAKMOD D (RS = 6.50e- 1TRS1 = 1e- 3TRS2 = 1e-6)
.MODEL DPLCAPMOD D (CJO = 3.30e- 9IS = 1e-3 0M = 0.82)
.MODEL MMEDMOD NMOS (VTO = 3.20 KP = 6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.73)
.MODEL MSTROMOD NMOS (VTO = 3.63 KP = 86 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.78 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.30 )
.MODEL RBREAKMOD RES (TC1 =1.02e- 3TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 9.40e-3 TC2 = 2.70e-5)
.MODEL RSLCMOD RES (TC1 = 4.10e-3 TC2 = 4.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.57e-3 TC2 = -7.05e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.85e- 3TC2 =9.00e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -5.8 VOFF= -2.4)
VON = -2.4 VOFF= -5.8)
VON = -1.8 VOFF= 0.5)
VON = 0.5 VOFF= -1.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUF75842P3 Rev. C0
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