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参数资料
型号： HUF76113DK8
厂商： HARRIS SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
中文描述： 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件页数： 1/12页
文件大小： 210K
代理商： HUF76113DK8
1
TM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a registered trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER is a trademark of Analogy, Inc.
|
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000.
HUF76113DK8
6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
Logic Level Gate Drive
6A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.032
Temperature Compensating PSPICE
Model
Temperature Compensating SABER
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113DK8
MS-012AA
76113DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
June 2000
File Number
4387.5
相关PDF资料
PDF描述
HUF76113T3ST 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
HUF76132P3 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
HUF76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
HUF76132SK8 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N沟道逻辑电平功率MOS场效应管)
HUF76139P3 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
相关代理商/技术参数
参数描述
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF76113SK8 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF76113T3ST 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF76121D3 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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