- 您现在的位置：买卖IC网 > PDF目录385409 > HUF76113DK8 (HARRIS SEMICONDUCTOR) 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管) PDF资料下载
参数资料
| 型号： | HUF76113DK8 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管) |
| 中文描述： | 6 A, 30 V, 0.041 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件页数： | 5/12页 |
| 文件大小： | 210K |
| 代理商： | HUF76113DK8 |
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
3
4
5
2
0
5
10
15
20
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
1
25
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
20
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
25
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 3V
30
V
GS
= 3.5V
V
GS
= 4V
I
D
= 1.8A
0
50
100
150
200
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
= 6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
0
0.6
0.8
1.0
1.2
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.4
V
GS
= 10V, I
D
= 6A
-80
-40
0
40
80
120
160
0.6
0.7
0.8
0.9
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.1
1.2
1.1
1.0
0.9-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76113DK8
相关PDF资料 |
PDF描述 |
|---|---|
| HUF76113T3ST | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管) |
| HUF76132P3 | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管) |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管) |
| HUF76132SK8 | 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N沟道逻辑电平功率MOS场效应管) |
| HUF76139P3 | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF76113DK8T | 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF76113SK8 | 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF76113SK8T | 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF76113T3ST | 功能描述:MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF76121D3 | 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.023Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。