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参数资料
| 型号： | HUFA75321P3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 35 A, 55 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 4/10页 |
| 文件大小： | 234K |
| 代理商： | HUFA75321P3 |
2001 Fairchild Semiconductor Corporation
HUFA75321P3, HUFA75321S3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
-
680
-
pF
Output Capacitance
COSS
-
270
-
pF
Reverse Transfer Capacitance
CRSS
-60
-
pF
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 35A
-
1.25
V
Reverse Recovery Time
trr
ISD = 35A, dISD/dt = 100A/s-
-
59
ns
Reverse Recovered Charge
QRR
ISD = 35A, dISD/dt = 100A/s-
-
82
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (
oC)
PO
WER
DISS
IP
A
T
IO
N
M
U
L
T
IPL
IER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
I D
,DRAI
N
CURRENT
(A
)
TC, CASE TEMPERATURE (
oC)
10
20
30
50
75
100
125
150
175
0
25
40
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10-4
10-3
10-2
10-1
100
101
10-5
0.1
1
2
0.01
Z
θJC
,NO
RM
AL
IZ
ED
T
H
E
R
M
A
L
IM
P
E
D
ANCE
HUFA75321P3, HUFA75321S3S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75321S3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321S3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3 | 功能描述:MOSFET 55V N-Ch PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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