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| 型号： | HUFA75321P3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 35 A, 55 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 6/10页 |
| 文件大小： | 234K |
| 代理商： | HUFA75321P3 |
2001 Fairchild Semiconductor Corporation
HUFA75321P3, HUFA75321S3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves (Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
O
RM
AL
IZ
ED
DRAIN
T
O
SOURC
E
TJ, JUNCTION TEMPERATURE (
oC)
O
N
RESIST
ANCE
VGS = 10V, ID = 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
NORM
AL
IZ
ED
G
A
T
E
TJ, JUNCTION TEMPERATURE (
oC)
T
HRESHOL
D
V
O
L
T
A
G
E
VGS = VDS, ID = 250A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
TJ, JUNCTION TEMPERATURE (
oC)
NORM
A
L
IZ
ED
DRAIN
T
O
SOU
RCE
ID = 250A
BREAKDO
WN
V
O
L
T
A
G
E
800
400
0
1020304050
C,
CAP
A
C
IT
ANCE
(
p
F
)
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
CISS
COSS
CRSS
60
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
8
6
4
0
V
GS
,
GA
T
E
T
O
SOURCE
V
O
L
T
A
G
E
(
V
)
VDD = 30V
2
15
20
0
Qg, GATE CHARGE (nC)
510
ID = 35A
ID = 17.5A
ID = 8.75A
WAVEFORMS IN
DESCENDING ORDER:
25
HUFA75321P3, HUFA75321S3S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA75321S3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321S3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3 | 功能描述:MOSFET 55V N-Ch PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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