参数资料
型号: HUFA75344G3
厂商: Fairchild Semiconductor
文件页数: 2/10页
文件大小: 0K
描述: MOSFET N-CH 55V 75A TO-247
标准包装: 300
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 75A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 210nC @ 20V
输入电容 (Ciss) @ Vds: 3200pF @ 25V
功率 - 最大: 285W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
HUFA75344S3
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
55
55
± 20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
V
V
V
A
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Specifications
T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV DSS
I DSS
I GSS
I D = 250 μ A, V GS = 0V (Figure 11)
V DS = 50V, V GS = 0V
V DS = 45V, V GS = 0V, T C = 150 o C
V GS = ± 20V
55
-
-
-
-
-
-
-
-
1
250
± 100
V
μ A
μ A
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS(TH)
r DS(ON)
V GS = V DS , I D = 250 μ A (Figure 10)
I D = 75A, V GS = 10V (Figure 9)
2
-
-
6.5
4
8.0
V
m ?
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R θ JC
R θ JA
(Figure 3)
TO-262
-
-
-
-
0.52
62
o C/W
o C/W
SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V DD = 30V, I D ? 75A,
R L = 0.4 ? , V GS = 10V,
R GS = 3.0 ?
-
-
-
-
-
-
-
13
125
46
57
-
187
-
-
-
-
147
ns
ns
ns
ns
ns
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Q g(TOT)
Q g(10)
Q g(TH)
Q gs
Q gd
V GS = 0V to 20V
V GS = 0V to 10V
V GS = 0V to 2V
V DD = 30V,
I D ? 75A,
R L = 0.4 ?
I g(REF) = 1.0mA
(Figure 13)
-
-
-
-
-
175
90
5.9
14
39
210
108
7.0
-
-
nC
nC
nC
nC
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V DS = 25V, V GS = 0V,
f = 1MHz
(Figure 12)
-
-
-
3200
1170
310
-
-
-
pF
pF
pF
?2013 Fairchild Semiconductor Corporation
HUFA75344S3 Rev. B4
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