参数资料
型号: HUFA75345S3ST
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
中文描述: 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 75A条(丁)|对263AB
文件页数: 3/10页
文件大小: 657K
代理商: HUFA75345S3ST
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
Z
θ
J
,
T
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1000
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
HUFA75639S3R4851
相关PDF资料
PDF描述
HUFA75542S3ST TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB
HUFA75545S3ST TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB
HUM-70J3 Digital Media System-on-Chip (DMSoC) 338-NFBGA
HUM-40F1 Analog IC
HUM-40F2 Analog IC
相关代理商/技术参数
参数描述
HUFA75429D3S 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET MOSFETs 60V, 20A, 25mз
HUFA75429D3ST 功能描述:MOSFET N-Ch UltraFET 60V 0.025 Ohm 20a RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75433S3S 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UltraFET MOSFETs 60V, 64A, 16mз
HUFA75433S3ST 功能描述:MOSFET 55V 64a 0.016 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75531SK8 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube