参数资料
型号: HUFA75545S3ST
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB
中文描述: 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 75A条(丁)|对263AB
文件页数: 3/10页
文件大小: 657K
代理商: HUFA75545S3ST
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
SINGLE PULSE
Z
θ
J
,
T
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1000
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
HUFA75639S3R4851
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