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参数资料
| 型号： | HUFA75545S3ST |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|对263AB |
| 文件页数： | 4/10页 |
| 文件大小： | 657K |
| 代理商： | HUFA75545S3ST |
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
1000
1
10
100
200
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DSS(MAX)
= 115V
10ms
1ms
100
μ
s
LIMITED BY r
DS(ON)
AREA MAY BE
10
100
0.001
0.01
0.1
1
STARTING T
J
= 25
ο
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
ο
C
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
20
40
60
80
100
0
1
2
3
4
5
6
7
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 7V
V
GS
= 20V
V
GS
= 5V
V
GS
= 6V
0
20
40
60
80
100
0
1.5
3.0
4.5
6.0
7.5
-55
o
C
25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
175
o
C
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
V
GS
= 10V, I
D
= 56A
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
HUFA75639S3R4851
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