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参数资料
| 型号： | HUFA76419D3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A DPAK |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 2,500 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 37 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
HUFA76419D3, HUFA76419D3S
PSPICE Electrical Model
.SUBCKT HUFA76419D3 2 1 3 ;
CA 12 8 1.20e-9
CB 15 14 1.20e-9
CIN 6 8 8.49e-10
rev 8 July 1999
LDRAIN
DPLCAP
5
DRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
RSLC1
51
DBREAK
RLDRAIN
2
RSLC2
EBREAK 11 7 17 18 68.35
EDS 14 8 5 8 1
5
51
ESLC
11
9
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 2.51e-9
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
LSOURCE 3 7 3.57e-9
MMED 16 6 8 8 MMEDMOD
CIN
8
7
LSOURCE
SOURCE
3
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RSOURCE
RLSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.12e-2
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RGATE 9 20 3.12
RLDRAIN 2 5 10
S1B
S2B
RVTEMP
RLGATE 1 9 25.1
RLSOURCE 3 7 35.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.60e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
19
-
VBAT
+
22
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3))}
.MODEL DBODYMOD D (IS = 8.51e-13 RS = 1.03e-2 TRS1 = 1.08e-3 TRS2 = 9.91e-7 CJO = 1.06e-9 TT = 4.90e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 2.39e- 1TRS1 = 1.23e- 4TRS2 = 1.11e-6)
.MODEL DPLCAPMOD D (CJO = 7.42e-1 0IS = 1e-3 0M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 2.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.12)
.MODEL MSTROMOD NMOS (VTO = 2.33 KP = 50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.75 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 31.2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.14e- 3TC2 = 1.02e-9)
.MODEL RDRAINMOD RES (TC1 = 1.19e-2 TC2 = 3.22e-5)
.MODEL RSLCMOD RES (TC1 = 9.91e-4 TC2 = 3.17e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.34e-3 TC2 = -5.33e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.45e- 3TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -5.5 VOFF= -3.0)
VON = -3.0 VOFF= -5.5)
VON = -0.2 VOFF= 0.1)
VON = 0.1 VOFF= -0.2)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUFA76419D3, HUFA76419D3S Rev. B
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| HUFA76429D3ST_F085 | MOSFET N-CH 60V 20A DPAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUFA76419D3ST_QF085 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419P3 | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419P3_S2565 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA76419S3S | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA76419S3ST | 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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