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参数资料
| 型号： | HUFA76423S3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 35A TO-263AB |
| 标准包装： | 800 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1060pF @ 25V |
| 功率 - 最大： | 85W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 带卷 (TR) |
HUFA76432P3, HUFA76432S3S
PSPICE Electrical Model
. .SUBCKT HUFA76432 2 1 3 ; rev 14 July 1999
CA 12 8 2.45e-9
CB 15 14 2.45e-9
CIN 6 8 1.71e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
LDRAIN
DRAIN
2
ESLC
EBREAK 11 7 17 18 66.61
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
RSLC2
RSLC1
51
5
51
DBREAK
11
RLDRAIN
9
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 4.16e-9
MMED 16 6 8 8 MMEDMOD
GATE
1
LGATE
RLGATE
-
ESG
+
EVTEMP
RGATE + 18 -
22
20
6
8
6
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
MMED
MSTRO
+
17
EBREAK 18
-
MWEAK
DBODY
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
CIN
8
7
LSOURCE
SOURCE
3
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 7e-3
RSOURCE
RLSOURCE
RGATE 9 20 2.29
RLDRAIN 2 5 10
RLGATE 1 9 54.2
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
CA
S1B
13
+
EGS
6
8
S2B
CB
+
EDS
5
8
14
IT
RVTEMP
19
-
VBAT
+
S1A
S1B
S2A
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
-
-
8
RVTHRES
22
S2B
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*150),3))}
.MODEL DBODYMOD D (IS = 1.1e-12 IKF = 20 RS = 3.95e-3 TRS1 = 1.25e-3 TRS2 = 8.85e-6 CJO = 2.05e-9 TT = 2.67e-8 M = 0.5 XTI = 4.6)
.MODEL DBREAKMOD D (RS = 2.80e- 1TRS1 = 8.10e- 4TRS2 = -9.70e-6)
.MODEL DPLCAPMOD D (CJO = 1.5e- 9IS = 1e-3 0N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 1.96 KP = 3.9 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.29)
.MODEL MSTROMOD NMOS (VTO = 2.35 KP = 90 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.72 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22.9 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.18e- 3TC2 = 2.35e-7)
.MODEL RDRAINMOD RES (TC1 = 8.75e-3 TC2 = 1.85e-5)
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.25e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -9.48e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.72e- 3TC2 = 9.50e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -6.2 VOFF= -2.4)
VON = -2.4 VOFF= -6.2)
VON = -1.1 VOFF= 0.5)
VON = 0.5 VOFF= -1.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2001 Fairchild Semiconductor Corporation
HUFA76432P3, HUFA76432S3S Rev. B
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| HUFA76429D3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| HUFA76429D3ST | 功能描述:MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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