参数资料
型号: HUFA76429D3
厂商: Fairchild Semiconductor
文件页数: 7/10页
文件大小: 0K
描述: MOSFET N-CH 60V 20A IPAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 75
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 46nC @ 10V
输入电容 (Ciss) @ Vds: 1480pF @ 25V
功率 - 最大: 110W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
其它名称: HUFA76429D3-ND
HUFA76429D3FS
HUFA76429D3
PSPICE Electrical Model
.SUBCKT HUFA76429D3 2 1 3 ;
rev 5 July 1999
CA 12 8 2.03e-9
CB 15 14 2.03e-9
CIN 6 8 1.39e-9
LDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
DPLCAP
5
RSLC1
RLDRAIN
DRAIN
2
51
DBREAK
EBREAK 11 7 17 18 68.10
EDS 14 8 5 8 1
EGS 13 8 6 8 1
RSLC2
5
51
ESLC
11
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE
-
ESG
+
EVTEMP
6
8
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
LDRAIN 2 5 1e-9
LGATE 1 9 5.42e-9
LSOURCE 3 7 4.16e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
GATE
1
RLGATE
RGATE +
9 20
18 -
22
6
CIN
MSTRO
8
MMED
RSOURCE
7
LSOURCE
RLSOURCE
SOURCE
3
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9.1e-3
RGATE 9 20 2.80
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 41.6
RSLC1 5 51 RSLCMOD 1e-6
CA
S1B
13
+
S2B
CB
+
14
IT
RVTEMP
19
-
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
EGS
-
6
8
EDS
-
5
8
8
+
22
VBAT
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*117),3))}
.MODEL DBODYMOD D (IS = 1.25e-12 IKF = 10 RS = 8.40e-3 TRS1 = 2.05e-3 TRS2 = 3.85e-6 CJO = 1.68e-9 TT = 4.90e-8 M = 0.48 XTI = 4.35)
.MODEL DBREAKMOD D (RS = 1.68e-1 TRS1 = 1e-3 TRS2 = -1e-6)
.MODEL DPLCAPMOD D (CJO = 1.28e-9 IS = 1e-30 N = 10 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 1.98 KP = 3.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.80)
.MODEL MSTROMOD NMOS (VTO = 2.30 KP = 52 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.72 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.15e-3 TC2 = -5.40e-7)
.MODEL RDRAINMOD RES (TC1 = 7.85e-3 TC2 = 1.95e-5)
.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -4.48e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.92e-3 TC2 = 9.50e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -6.2 VOFF= -2.4)
VON = -2.4 VOFF= -6.2)
VON = -1.1 VOFF= 0.5)
VON = 0.5 VOFF= -1.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
HUFA76429D3 Rev. C 1
www.fairchildsemi.com
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