参数资料
型号: HUFA76429D3
厂商: Fairchild Semiconductor
文件页数: 8/10页
文件大小: 0K
描述: MOSFET N-CH 60V 20A IPAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 75
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 46nC @ 10V
输入电容 (Ciss) @ Vds: 1480pF @ 25V
功率 - 最大: 110W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
其它名称: HUFA76429D3-ND
HUFA76429D3FS
HUFA76429D3
SABER Electrical Model
REV 5 July 1999
template HUFA76429d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 1.25e-12, cjo = 1.68e-9, tt = 4.90e-8, xti = 4.35, m = 0.48)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 1.28e-9, is = 1e-30, n = 10, m = 0.8)
m..model mmedmod = (type=_n, vto = 1.98, kp = 3.2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.30, kp = 52, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.72, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2.4)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.4, voff = -6.2)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.1, voff = 0.5)
10
DPLCAP
5
LDRAIN
DRAIN
2
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.1)
c.ca n12 n8 = 2.03e-9
c.cb n15 n14 = 2.03e-9
c.cin n6 n8 = 1.39e-9
RSLC2
RSLC1
51
ISCL
RDBREAK
72
RLDRAIN
RDBODY
i.it n8 n17 = 1
l.lsource n3 n7 = 4.16e-9
9
20
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
LGATE
GATE
l.ldrain n2 n5 = 1e-9 1
l.lgate n1 n9 = 5.42e-9
RLGATE
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
-
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
50
RDRAIN
16
21
MMED
MSTRO
8
DBREAK
11
MWEAK
EBREAK
+
17
18
-
RSOURCE
7
71
DBODY
LSOURCE
RLSOURCE
SOURCE
3
res.rbreak n17 n18 = 1, tc1 = 1.15e-3, tc2 = -5.40e-7
res.rdbody n71 n5 = 8.40e-3, tc1 = 2.05e-3, tc2 = 3.85e-6
res.rdbreak n72 n5 = 1.68e-1, tc1 = 1.00e-3, tc2 = -1.00e-6
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
res.rdrain n50 n16 = 9.10e-3, tc1 = 7.85e-3, tc2 = 1.95e-5
S1B
S2B
RVTEMP
res.rgate n9 n20 = 2.80
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 54.2
res.rlsource n3 n7 = 41.6
res.rslc1 n5 n51 = 1e-6, tc1 = 4.97e-3, tc2 = 5.05e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 6.5e-3, tc1 = 1.5e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.92e-3, tc2 = 9.50e-7
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
19
-
VBAT
+
22
res.rvthres n22 n8 = 1, tc1 = -1.85e-3, tc2 = -4.48e-6
spe.ebreak n11 n7 n17 n18 = 68.10
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/117))** 3))
}
}
HUFA76429D3 Rev. C 1
www.fairchildsemi.com
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