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参数资料
型号： HY29F800ATG-55I
厂商： HYNIX SEMICONDUCTOR INC
元件分类： DRAM
英文描述： 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述： 512K X 16 FLASH 5V PROM, 55 ns, PDSO44
封装： PLASTIC, SOP-44
文件页数： 4/40页
文件大小： 279K
代理商： HY29F800ATG-55I
4
Rev. 1.1/Feb 02
HY29F800A
SIGNAL DESCRIPTIONS
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N
MEMORY ARRAY ORGANIZATION
The 1 Mbyte Flash memory array is organized into
nineteen blocks called
sectors
(S0, S1, . . . , S18).
A sector is the smallest unit that can be erased
and which can be protected to prevent accidental
or unauthorized erasure. See the
‘
Bus Operations
’
and
‘
Command Definitions
’
sections of this docu-
ment for additional information on these functions.
In the HY29F800A, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining fif-
teen sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29F800AB) or at
the top of the address range (HY29F800AT).
Table 1 defines the sector addresses and corre-
sponding address ranges for the top and bottom
boot block versions of the HY29F800A.
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相关PDF资料
PDF描述
HY29F800ATG-70 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-70I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
相关代理商/技术参数
参数描述
HY29F800ATG-70 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-70I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATG-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ATR-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
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