参数资料
型号: HY29F800ATR-12I
厂商: Hynix Semiconductor Inc.
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 8兆位(1Mx8/512Kx16),5伏只,闪存
文件页数: 30/40页
文件大小: 279K
代理商: HY29F800ATR-12I
30
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ2, DQ6) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 20. Toggle Polling Timings (During Automatic Algorithms)
t
BUSY
t
CH
t
OE
t
CE
t
RC
VA
Complement
Complement
True
Valid Data
Status Data
Status Data
Data
Valid Data
RY/BY#
DQ[6:0]
DQ[7]
WE#
OE#
CE#
Addresses
VA
VA
t
ACC
t
OEH
t
OH
t
DF
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 19. Data# Polling Timings (During Automatic Algorithms)
t
BUSY
t
CH
t
OE
t
CE
t
RC
Valid Status
Valid Status
Valid Status
RY/BY#
DQ[6], [2]
WE#
OE#
CE#
Addresses
VA
VA
VA
t
OEH
t
OH
t
DF
VA
(second read)
(first read)
(stops toggling)
Valid Data
t
ACC
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