参数资料
型号: HY29F800ATT-90
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
封装: TSOP-48
文件页数: 34/40页
文件大小: 279K
代理商: HY29F800ATT-90
34
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 4.5 volts (4.75 volts for 50 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
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相关PDF资料
PDF描述
HY29F800ATT-90I 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800ABG-90 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
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相关代理商/技术参数
参数描述
HY29F800ATT-90I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
HY29F800BG-12 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
HY29F800BG-12E 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
HY29F800BG-12I 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
HY29F800BG-55 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM