参数资料
型号: HY29LV320BF-12I
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 32 Mbit (2M x 16) Low Voltage Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
封装: 7 X 11 MM, FBGA-63
文件页数: 14/44页
文件大小: 323K
代理商: HY29LV320BF-12I
14
r1.3/May 02
HY29LV320
Figure 3. Sector Group Protect Algorithm
START
RESET# = V
ID
WP#/ACC = V
IH
Wait 1 us
First Write Cycle:
Write 0x60 to device
Sector Group Protect:
Write 0x60 to Address
Wait 150 us
Verify Sector Group Protect:
Write 0x40 to Address
Read from Address
Data = 0x01
Protect Another
Sector Group
YES
TRYCNT = 25
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
RESET# = V
IH
Write Reset Command
SECTOR GROUP
PROTECT COMPLETE
TRYCNT = 1
Set Address:
A[20:12] = Address of Sector
Group to be Protected
A[6] = 0, A[1] = 1, A[0] = 0
Figure 4. Sector Unprotect Algorithm
START
Note:
All sector groups
must be protected prior to
sector unprotection
TRYCNT = 1
SNUM = 0
RESET# = V
ID
WP#/ACC = V
IH
Wait 1 us
First Write Cycle:
Write 0x60 to device
Sector Unprotect:
Write 0x60 to Address
Set Address:
A[20:12] = Address of
Sector Group SNUM
A[6] = 1, A[1] = 1, A[0] = 0
Verify Unprotect:
Write 0x40 to Address
Read from Address
Data = 0x00
SNUM = 20
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
RESET# = V
IH
Write Reset Command
SECTOR UNPROTECT
COMPLETE
SNUM = SNUM + 1
Wait 15 ms
Set Address:
A[6] = 1, A[1] = 1, A[0] = 0
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