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参数资料
| 型号： | HY29LV320TF-80 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 80 ns, PBGA63 |
| 封装： | 7 X 11 MM, FBGA-63 |
| 文件页数： | 24/44页 |
| 文件大小： | 323K |
| 代理商： | HY29LV320TF-80 |
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24
r1.3/May 02
HY29LV320
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Table 13. CFI Mode: Vendor-Specific Extended Query Data Values
WRITE OPERATION STATUS
The HY29LV320 provides a number of facilities to
determine the status of a program or erase op-
eration. These are the RY/BY# (Ready/Busy#)
pin and certain bits of a status word which can be
read from the device during the programming and
erase operations. Table 11 summarizes the sta-
tus indications and further detail is provided in the
subsections which follow.
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algo-
rithm is in progress or has completed. A pull-up
resistor to V
CC
is required for proper operation. RY/
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the opera-
tion and is ready to read array data in the normal or
Erase Suspend modes, or it is in the Standby mode.
DQ[7] - Data# Polling
The Data# (
“
Data Bar
”
) Polling bit, DQ[7], indicates
to the host system whether an Automatic Algo-
rithm is in progress or completed, or whether the
device is in Erase Suspend mode. Data# Polling
is valid after the rising edge of the final WE# pulse
in the Program or Erase command sequence.
The system must do a read at the program ad-
dress to obtain valid programming status informa-
tion on this bit. While a programming operation is
in progress, the device outputs the complement
of the value programmed to DQ[7]. When the pro-
gramming operation is complete, the device out-
puts the value programmed to DQ[7]. If a pro-
gram operation is attempted within a protected
sector, Data# Polling on DQ[7] is active for ap-
proximately 1 μs, then the device returns to read-
ing array data.
The host must read at an address within any non-
protected sector specified for erasure to obtain
valid erase status information on DQ[7]. During
an erase operation, Data# Polling produces a
“
0
”
on DQ[7]. When the erase operation is complete,
or if the device enters the Erase Suspend mode,
Data# Polling produces a
“
1
”
on DQ[7]. If all sec-
tors selected for erasing are protected, Data#
Polling on DQ[7] is active for approximately 100
μs, then the device returns to reading array data.
If at least one selected sector is not protected, the
erase operation erases the unprotected sectors,
相关PDF资料 |
PDF描述 |
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| HY29LV320BF-80 | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BF-70I | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BF-80I | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| HY29LV320BF-90I | 32 Mbit (2M x 16) Low Voltage Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29LV320TF-80I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TF-90 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TF-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TT-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
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