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参数资料
| 型号： | HY57V643220CLT-55 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4 Banks x 512K x 32Bit Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 |
| 文件页数： | 4/12页 |
| 文件大小： | 183K |
| 代理商： | HY57V643220CLT-55 |
Rev. 0.8/Aug. 02
4
HY57V643220C
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V
2.V
DD/
V
DDQ
(min) is 3.15V for HY57V643220C(L)T-47/5/55/6
3.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration with no input clamp diodes
4.V
IL
(min) is acceptable -2.0V AC pulse width with
≤
3ns of duration with no input clamp diodes
AC OPERATING CONDITION
(TA=0 to 70
°
C
, 3.0V
≤
V
DD
≤
3.6V, V
SS
=0V - Note1)
Note :
1.3.15V
≤
V
DD
≤
3.6V is applied for HY57V643220C(L)T-47/5/55/6
2.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD,
V
DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature . Time
T
SOLDER
260 . 10
°
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1,2
Input high voltage
V
IH
2.0
3.0
V
DDQ
+ 0.3
V
1,3
Input low voltage
V
IL
V
SSQ
- 0.3
0
0.8
V
1,4
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
2
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| HY57V643220CLT-6 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-7 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-8 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220D | 4Banks x 512K x 32bits Synchronous DRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY57V643220CLT-55I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X512KX32|CMOS|TSSOP|86PIN|PLASTIC |
| HY57V643220CLT-5I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SDRAM |
| HY57V643220CLT-6 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-6I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X512KX32|CMOS|TSSOP|86PIN|PLASTIC |
| HY57V643220CLT-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
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