- 您现在的位置：买卖IC网 > PDF目录385422 > HY57V643220CLT-55 (HYNIX SEMICONDUCTOR INC) 4 Banks x 512K x 32Bit Synchronous DRAM PDF资料下载
参数资料
| 型号： | HY57V643220CLT-55 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4 Banks x 512K x 32Bit Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.5 MM PITCH, TSOP2-86 |
| 文件页数： | 6/12页 |
| 文件大小： | 183K |
| 代理商： | HY57V643220CLT-55 |
Rev. 0.8/Aug. 02
6
HY57V643220C
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V643220CT-47/5/55/6/7/8/P/S
4.HY57V643220CLT-47/5/55/6/7/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-47
-5
-55
-6
-7
-8
-P
-S
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
≥
tRAS(min), tRP
≥
tRP(min),
IOL=0mA
220
200
190
180
170
150
150
150
mA
1
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤
VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
2
Precharge Standby
Current
in non power down mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks. All other pins
≥
VDD-0.2V or
≤
0.2V
15
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
10
Active Standby Current
in power down mode
IDD3P
CKE
≤
VIL(max), tCK = 15ns
3
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3
Active Standby Current
in non power down mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks. All other pins
VDD-0.2V or
0.2V
40
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are
stable
25
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min),
tRAS
≥
tRAS(min), IOL=0mA
All banks active
CL=3
290
280
260
240
210
180
180
180
mA
1
CL=2
160
160
160
160
160
160
160
Auto Refresh Current
IDD5
tRRC
≥
tRRC(min), 2 banks active
260
250
235
220
210
190
210
190
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
3
1
4
相关PDF资料 |
PDF描述 |
|---|---|
| HY57V643220CLT-6 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-7 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-8 | 4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220D | 4Banks x 512K x 32bits Synchronous DRAM |
| HY57V643220DTP-55 | 4Banks x 512K x 32bits Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY57V643220CLT-55I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X512KX32|CMOS|TSSOP|86PIN|PLASTIC |
| HY57V643220CLT-5I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SDRAM |
| HY57V643220CLT-6 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
| HY57V643220CLT-6I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|4X512KX32|CMOS|TSSOP|86PIN|PLASTIC |
| HY57V643220CLT-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 512K x 32Bit Synchronous DRAM |
发布紧急采购，3分钟左右您将得到回复。