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参数资料
| 型号： | HY57V64420HGLTP-S |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封装： | 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
| 文件页数： | 6/11页 |
| 文件大小： | 198K |
| 代理商： | HY57V64420HGLTP-S |
HY57V64420HGTP
Rev. 0.5 / Apr. 2004
4
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70°C)
Note :
1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with
≤3ns of duration
3.VIL (min) is acceptable -2.0V AC pulse width with
≤3ns of duration
AC OPERATING CONDITION (TA=0 to 70°C, VDD=3.3 ± 0.3V, VSS=0V)
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1W
Soldering Temperature
Time
TSOLDER
260
10
°C Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1
Input High Voltage
VIH
2.0
3.0
VDDQ + 2.0
V
1,2
Input Low Voltage
VIL
VSSQ - 2.0
0
0.8
V
1,3
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
VIH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY57V64420HGLT-S | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 4M x 4Bit Synchronous DRAM |
| HY57V64420HGT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16Mx4|3.3V|4K|6|SDR SDRAM - 64M |
| HY57V64420HGT-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 SDRAM |
| HY57V64420HGT-7 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x4 SDRAM |
| HY57V64420HGT-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 4M x 4Bit Synchronous DRAM |
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