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参数资料
| 型号： | HY5DV281622AT |
| 英文描述： | 8Mx16|3.3V|4K|45|DDR SDRAM - 128M |
| 中文描述： | 8M × 16位| 3.3 | 4K的| 45 | DDR SDRAM内存- 128M的 |
| 文件页数： | 13/27页 |
| 文件大小： | 273K |
| 代理商： | HY5DV281622AT |
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Rev. 0.3/May. 02
13
HY5DV281622AT
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CK may cause malfunction of any bank which is in active state.
Current
State
CKEn-
1
CKEn
/CS
/RAS
/CAS
/WE
/ADD
Action
SELF
REFRESH
1
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit self refresh, enter idle after tSREX
L
H
L
H
H
H
X
Exit self refresh, enter idle after tSREX
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue self refresh
POWER
DOWN
2
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit power down, enter idle
L
H
L
H
H
H
X
Exit power down, enter idle
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue power down mode
ALL BANKS
IDLE
4
H
H
X
X
X
X
X
See operation command truth table
H
L
L
L
L
H
X
Enter self refresh
H
L
H
X
X
X
X
Exit power down
H
L
L
H
H
H
X
Exit power down
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
H
X
X
ILLEGAL
H
L
L
L
L
L
X
ILLEGAL
L
L
X
X
X
X
X
NOP
ANY STATE
OTHER
THAN
ABOVE
H
H
X
X
X
X
X
See operation command truth table
H
L
X
X
X
X
X
ILLEGAL
5
L
H
X
X
X
X
X
INVALID
L
L
X
X
X
X
X
INVALID
相关PDF资料 |
PDF描述 |
|---|---|
| HY5DV281622AT-5 | SDRAM|DDR|4X2MX16|CMOS|TSSOP|66PIN|PLASTIC |
| HY5DV651622TC-G55 | DDR Synchronous DRAM |
| HY5DV651622TC-G6 | DDR Synchronous DRAM |
| HY5DV651622TC-G7 | DDR Synchronous DRAM |
| HY5DV651622T-G55 | DDR Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5DV281622AT-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SDRAM|DDR|4X2MX16|CMOS|TSSOP|66PIN|PLASTIC |
| HY5DV281622DT | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DV281622DT-33 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DV281622DT-36 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DV281622DT-4 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
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