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参数资料
| 型号： | HY5V16CF-S |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16内存 |
| 文件页数： | 6/11页 |
| 文件大小： | 102K |
| 代理商： | HY5V16CF-S |
HY5V16CF
Rev. 0.0/Jun.01
6
DC CHARACTERISTICS II
(TA=0 to 70
°
C
, V
D D
=3.3
±
0.3V
Note5
, V
SS
= 0 V )
Note :
1.I
D D 1
and I
D D 4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh R A S cycle time) is shown at AC CHARACTERISTICS II
Parameter
S y m b o l
Test Condition
Speed
Unit
Note
-H
-S
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
R C
(min), I
OL
= 0 m A
110
90
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
C K
= min
2
mA
I
D D 2 P S
CKE
≤
V
IL
(max), t
C K
=
∞
1
mA
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), C S
≥
V
IH
(min), t
C K
= min
Input signals are changed one time during
2clks. All other pins
≥
V
D D
-0.2V or
≤
0.2V
50
mA
I
D D 2 N S
CKE
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
12
mA
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
C K
= min
7
mA
I
D D 3 P S
CKE
≤
V
IL
(max), t
C K
=
∞
5
mA
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), C S
≥
V
IH
(min), t
C K
= min
Input signals are changed one time during
2clks. All other pins
≥
V
D D
-0.2V or
≤
0.2V
50
mA
I
D D 3 N S
CKE
≥
V
IH
(min), t
C K
=
∞
Input signals are stable.
20
mA
Burst Mode Operating Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
= 0 m A
All banks active
C L = 3
150
100
mA
1
C L = 2
100
mA
Auto Refresh Current
I
DD5
t
R R C
≥
t
R R C
(min), All banks active
100
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
1
mA
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