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参数资料
| 型号： | HY628100B-I |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件页数： | 4/10页 |
| 文件大小： | 175K |
| 代理商： | HY628100B-I |
HY628100B Series
RECOMMENDED DC OPERATING CONDITION
T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E) / -40
é
to 85
é
(I), unless otherwise specified
Symbol
Parameter
Min.
Typ.
Vcc
Supply Voltage
4.5
5.0
Vss
Ground
0
0
V
IH
Input High Voltage
2.2
-
V
IL
Input Low Voltage
-0.5
(1)
-
Note :
1. V
IL
= -1.5V for pulse width less than 30ns and not 100% tested
DC ELECTRICAL CHARACTERISTICS
Vcc = 4.5V~5.5V, T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E) / -40
é
to 85
é
(I), unless otherwise specified
Symbol
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc,
/CS1 = V
IH
or CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating
/CS1 = V
IL
, CS2 = V
IH
,
Current
V
IN
= V
IH
or V
IL
Cycle Time = Min, 100% duty,
I
IO
= 0mA
I
SB
TTL Standby Current
(TTL Input)
V
IN
= V
IH
or V
IL
I
SB1
Standby
HY628100B
/CS1 > Vcc - 0.2V or
Current
CS2 < 0.2V ,
(CMOS Input)
HY628100B-E/I
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1mA
Note : Typical values are at Vcc = 5.0V, T
A
= 25
°
C
CAPACITANCE
Temp = 25
°
C, f= 1.0MHz
Symbol
Parameter
Condition
C
IN
Input Capacitance
V
IN
= 0V
C
OUT
Output Capacitance
V
I/O
= 0V
Note : These parameters are sampled and not 100% tested
Rev 12 / Apr.2001
3
Max.
5.5
0
Vcc+0.5
0.8
Unit
V
V
V
V
Test Condition
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
/CS1 = V
IL
, CS2 = V
IH,
-
-
10
mA
-
-
50
mA
/CS1 = V
IH
or CS2 = V
IL
-
-
2
mA
L
LL
L
LL
-
-
-
-
-
2
1
2
1
-
-
100
20
100
30
0.4
-
uA
uA
uA
uA
V
V
2.4
Max.
6
8
Unit
pF
pF
相关PDF资料 |
PDF描述 |
|---|---|
| HY628100BLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1 | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY628100BLG | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-E | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:IC-SMD-SRAM 1MB |
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