- 您现在的位置：买卖IC网 > PDF目录384468 > HY628100B-I (Hynix Semiconductor Inc.) 128K x8 bit 5.0V Low Power CMOS slow SRAM PDF资料下载
参数资料
| 型号： | HY628100B-I |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件页数： | 5/10页 |
| 文件大小： | 175K |
| 代理商： | HY628100B-I |
HY628100B Series
AC CHARACTERISTICS
Vcc = 4.5V~5.5V, T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E) / -40
é
to 85
é
(I), unless otherwise specified
Symbol
Parameter
#
Rev 12 / Apr.2001
4
-55
-70
-85
Min.
Max.
Min.
Max.
Min
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA*
tACS*
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
10
5
0
0
10
-
70
-
-
-
10
5
0
0
10
-
85
-
-
-
10
5
0
0
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
25
-
-
20
20
-
70
70
35
-
-
25
25
-
85
85
45
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
Comment : tAA* and tACS* can meet 50ns with 30pF test load.
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E) / -40
é
to 85
é
(I), unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
Others
Comment
* : Test load is 30pF for 50ns
AC TEST LOADS
TTL
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
55
45
45
0
40
0
0
25
0
5
-
-
-
-
-
-
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
70
70
0
55
0
0
40
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
30
-
-
-
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
Note : Including jig and scope capacitance
CL(1)
READ CYCLE
Unit
相关PDF资料 |
PDF描述 |
|---|---|
| HY628100BLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1 | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY628100BLG | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-E | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:IC-SMD-SRAM 1MB |
发布紧急采购，3分钟左右您将得到回复。