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参数资料
| 型号： | HY628100BLT1 |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件页数： | 2/10页 |
| 文件大小： | 175K |
| 代理商： | HY628100BLT1 |
HY628100B Series
DESCRIPTION
The HY628100B is a high speed, low power and
1M bit CMOS Static Random Access Memory
organized as 131,072 words by 8bit. The
HY628100B uses high performance CMOS
process technology and designed for high speed
low power circuit technology. It is particulary well
suited for used in high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 2.0V.
Product
Voltage
Speed
Operation
No
(V)
(ns)
Current/Icc(mA)
HY628100B
4.5~5.5
50*/55/70/85
10
HY628100B-E
4.5~5.5
50*/55/70/85
10
HY628100B-I
4.5~5.5
50*/55/70/85
10
Comment : 50ns is available with 30pF test load.
PIN CONNECTION
Rev 12 / Apr.2001
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(L/LL-part)
-. 2.0V(min) data retention
Standard pin configuration
-. 32pin SOP - 525mil
-. 32pin TSOPI - 8X20(Standard)
Standby Current(uA)
L
100
100
100
Temperature
(
°
C)
0~70
-25~85
-40~85
LL
20
30
30
SOP TSOP-I(Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name
Pin Function
/CS1
Chip Select 1
CS2
Chip Select 2
/WE
Write Enable
/OE
Output Enable
A0 ~ A16
Address Inputs
I/O1 ~ I/O8
Data Inputs / Outputs
Vcc
Power(4.5V~5.5V)
Vss
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
CS2
/WE
A7
IVss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/CS1
DQ8
A9
A15
NC
A7
A6
MEMORY ARRAY
128K x 8
ROW
DECODER
S
W
D
B
I/O1
I/O8
C
D
A
B
A0
A16
C
L
/CS1
CS2
/OE
/WE
相关PDF资料 |
PDF描述 |
|---|---|
| HY628100BLT1-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY62SF16804B | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-DFC | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY628100BLT1-E | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100G-10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| HY628100G-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
| HY628100G-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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