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参数资料
| 型号： | HY62SF16804B-C |
| 厂商： | Hynix Semiconductor Inc. |
| 元件分类： | DRAM |
| 英文描述： | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| 中文描述： | 为512k x16位1.8V的超低功耗SRAM的速度进行全面的CMOS |
| 文件页数： | 4/10页 |
| 文件大小： | 311K |
| 代理商： | HY62SF16804B-C |
HY62SF16804B
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Vcc
Supply Voltage
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 1.65V~2.3V, T
A
= 0
°
C to 70
°
C / -40
°
C to 85
°
C
Sym
Parameter
I
LI
Input Leakage Current
Rev.00/May. 2001
3
Min.
1.65
0
1.4
-0.3
(1)
Typ.
1.8
0
-
Max.
2.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
Test Condition
Min.
-1
Typ.
-
Max.
1
Unit
uA
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
/LB = V
IH
I
LO
Output Leakage Current
-1
-
1
uA
Icc
Operating Power Supply
Current
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
3
mA
Cycle Time=Min,100% duty,
I
I/O =
0mA, /CS = V
IL,
V
IN
= V
IH
or V
IL
Cycle time = 1us, 100% duty,
I
I/O =
0mA, /CS < 0.2V,
V
IN
<0.2V
/CS = V
IH
or
/UB=/LB= V
IH
,
V
IN
= V
IH
or V
IL
/CS > Vcc - 0.2V or
/UB=/LB > Vcc-0.2V,
V
IN
> Vcc-0.2V or
V
IN
< Vss+0.2V
I
OL
= 0.1mA
I
OH =
-0.1mA
-
25
mA
Icc1
Average Operating
Current
-
-
3
mA
I
SB
TTL Standby Current
(TTL Input)
-
-
0.05
mA
SL
-
-
8
uA
I
SB1
Standby Current
(CMOS Input)
LL
-
1
15
uA
V
OL
V
OH
Note : 1. Typical values are at Vcc = 1.8V, T
A
= 25
°
C
2. Typical values are sampled and not 100% tested
CAPACITANCE
(Temp = 25
°
C, f = 1.0MHz)
Symbol
Output Low Voltage
Output High Voltage
-
-
-
0.2
-
V
V
1.4
Parameter
Conditio
n
V
IN
= 0V
V
I/O
= 0V
Max.
Unit
C
IN
C
OUT
Note : These parameters are sampled and not 100% tested
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
Output Capacitance(I/O)
8
10
pF
pF
相关PDF资料 |
PDF描述 |
|---|---|
| HY62SF16804B-I | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFC | RES, 33, 1/2W, TKF, 5%, 2010 |
| HY62SF16804B-SFI | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62VT08081E-DGI | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTC | 32Kx8bit CMOS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY62SF16804B-DFC | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-DFI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFC | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
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