- 您现在的位置：买卖IC网 > PDF目录384468 > HY62SF16804B-I (Hynix Semiconductor Inc.) 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM PDF资料下载
参数资料
| 型号： | HY62SF16804B-I |
| 厂商： | Hynix Semiconductor Inc. |
| 元件分类： | DRAM |
| 英文描述： | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| 中文描述： | 为512k x16位1.8V的超低功耗SRAM的速度进行全面的CMOS |
| 文件页数： | 3/10页 |
| 文件大小： | 311K |
| 代理商： | HY62SF16804B-I |
HY62SF16804B
ORDERING INFORMATION
Part No.
HY62SF16804B-DFC
HY62SF16804B-SFC
HY62SF16804B-DFI
HY62SF16804B-SFI
Note 1. C : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
V
IN,
V
OUT
Input/Output Voltage
Vcc
Power Supply
Rev.00/May. 2001
2
Speed
70/85/100
70/85/100
70/85/100
70/85/100
Power
LL-part
SL-part
LL-part
SL-part
Package
fBGA
fBGA
fBGA
fBGA
Temp.
C
C
I
I
Parameter
Rating
Unit
V
V
°
C
°
C
°
C
W
°
C
sec
Remark
-0.3 to Vcc+0.3
-0.3 to 2.6V
0 to 70
-40 to 85
-55 to 150
1.0
260
10
HY62SF16804B-C
HY62SF16804B-I
T
A
Operating Temperature
T
STG
P
D
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
I/O
/CS
/WE
/OE
/LB
/UB
Mode
I/O1~I/O8
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
Power
H
X
L
L
L
L
X
X
H
H
H
L
X
X
H
H
L
X
X
H
L
X
L
H
L
L
H
L
X
H
X
L
H
L
L
H
L
L
Deselected
Deselected
Output Disabled
Output Disabled
Read
Write
Standby
Standby
Active
Active
Active
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care(V
IH or
V
IL)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
相关PDF资料 |
PDF描述 |
|---|---|
| HY62SF16804B-SFC | RES, 33, 1/2W, TKF, 5%, 2010 |
| HY62SF16804B-SFI | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62VT08081E-DGI | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTC | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTE | 32Kx8bit CMOS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY62SF16804B-SFC | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16806A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16|1.8V|70/85/100|Super Low Power Slow SRAM - 8M |
| HY62SF16806A-C | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
| HY62SF16806A-DM10C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
发布紧急采购，3分钟左右您将得到回复。