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参数资料
| 型号： | HY62SF16804B-SFC |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | RES, 33, 1/2W, TKF, 5%, 2010 |
| 中文描述： | 为512k x16位1.8V的超低功耗SRAM的速度进行全面的CMOS |
| 文件页数： | 5/10页 |
| 文件大小： | 311K |
| 代理商： | HY62SF16804B-SFC |
HY62SF16804B
AC CHARATERISTICS
Vcc = 1.65V~2.3V, T
A
= 0
°
C to 70
°
C / -40
°
C to 85
°
C
Rev.00/May. 2001
4
-70
-85
-10
#
Symbol
Parameter
Min.
Max.
Min.
Max.
Min
Max.
READ CYCLE
1
tRC
2
tAA
3
tACS
4
tOE
5
tBA
6
tCLZ
7
tOLZ
8
tBLZ
9
tCHZ
10
tOHZ
11
tBHZ
12
tOH
WRITE CYCLE
13
tWC
14
tCW
15
tAW
16
tBW
17
tAS
18
tWP
19
tWR
20
tWHZ
21
tDW
22
tDH
23
tOW
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C / -40
°
C to 85
°
C, unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Output Load
Other
AC TEST LOADS
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
/LB, /UB Access Time
Chip Select to Output in Low Z
Output Enable to Output in Low Z
/LB, /UB Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
/LB, /UB Disable to Output in High Z
Output Hold from Address Change
70
-
-
-
-
10
5
10
0
0
0
10
-
85
-
-
-
-
10
5
10
0
0
0
10
-
100
-
-
-
-
10
5
10
0
0
0
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
35
70
-
-
-
20
20
20
-
85
85
40
85
-
-
-
30
30
30
-
100
100
45
100
-
-
-
30
30
30
-
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
/LB, /UB Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
70
60
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
-
85
70
70
70
0
60
0
0
35
0
5
-
-
-
-
-
-
-
100
80
80
80
0
70
0
0
45
0
10
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
25
-
-
-
Value
0.4V to 1.6V
5ns
0.9V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
Note
1. Including jig and scope capacitance
D
OUT
3273 Ohm
CL(1)
4091 Ohm
V
TM
= 1.8V
Unit
相关PDF资料 |
PDF描述 |
|---|---|
| HY62SF16804B-SFI | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62VT08081E-DGI | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTC | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTE | 32Kx8bit CMOS SRAM |
| HY62VT08081E-DTI | 32Kx8bit CMOS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY62SF16804B-SFI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16806A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16|1.8V|70/85/100|Super Low Power Slow SRAM - 8M |
| HY62SF16806A-C | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
| HY62SF16806A-DM10C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| HY62SF16806A-DM10I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
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