参数资料
型号: HYM71V16755HCT8M-P
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封装: DIMM-168
文件页数: 1/14页
文件大小: 236K
代理商: HYM71V16755HCT8M-P
16Mx72 bits
PC100 SDRAM Unbuffered DIMM
based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.4/Dec. 01
2
HYM71V16755HCT8M Series
DESCRIPTION
The Hynix HYM71V16755HCT8M Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine
16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. One 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V16755HCT8M Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes
memory. The Hynix HYM71V16755HCT8M Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.155” (29.34mm) Height PCB with single sided
components
Single 3.3
±0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM71V16755HCT8M-8
125MHz
4 Banks
4K
Normal
TSOP-II
Gold
HYM71V16755HCT8M-P
100MHz
HYM71V16755HCT8M-S
100MHz
HYM71V16755HCLT8M-8
125MHz
Low Power
HYM71V16755HCLT8M-P
100MHz
HYM71V16755HCLT8M-S
100MHz
相关PDF资料
PDF描述
HYM71V8M635HCLT6-H 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
HYM72V32656AT8-P 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
HYM76V16C755HGT4-8 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
HYM76V16C755HGT4-S 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
HYMD264G726A4-H 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
相关代理商/技术参数
参数描述
HYM71V16C735AT8 制造商:未知厂家 制造商全称:未知厂家 功能描述:16Mx72|3.3V|K/H|x9|SDR SDRAM - Registered DIMM 128MB
HYM71V16C735AT8-H 制造商:未知厂家 制造商全称:未知厂家 功能描述:x72 SDRAM Module
HYM71V16C735AT8-K 制造商:未知厂家 制造商全称:未知厂家 功能描述:x72 SDRAM Module
HYM71V16C735BT8 制造商:未知厂家 制造商全称:未知厂家 功能描述:16Mx72|3.3V|K/H|x8|SDR SDRAM - Registered DIMM 128MB
HYM71V16C735HCT8 制造商:未知厂家 制造商全称:未知厂家 功能描述:16Mx72|3.3V|K/H|x9|SDR SDRAM - Registered DIMM 128MB