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参数资料
| 型号： | HZS3.9NB1 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3.875 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | MHD, 2 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 31K |
| 代理商： | HZS3.9NB1 |
HZS-N Series
Electrical Characteristics (Ta = 25
°C) (cont)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z (V)*
Test
Condition
I
R (A)
Test
Condition
r
d ()
Test
Condition
Type
Grade
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
HZS39N
B1
34.68
36.47
5
0.2
30
85
5
B2
35.36
37.19
B3
36.00
37.85
B4
36.63
38.52
Note:
Tested with pulse (P
W = 40ms)
Type No. is as follows: HZS2.0NB1, HZS2.0NB2, HZS39NB4.
10
8
6
4
2
0
4
8
12
16
20
Zener
Current
I
(mA)
Z
Zener Voltage V
(V)
Z
24
28
32
40
36
HZS6.8N
HZS13N
HZS15N
HZS18N
HZS2.0N
HZS20N
HZS22N
HZS36N
HZS39N
HZS30N
HZS2.4N
HZS3.0N HZS3.6N
HZS4.3N HZS5.1N HZS6.2N
HZS7.5N HZS8.2N HZS9.1N HZS10N HZS11N HZS12N
HZS16N
HZS24N
HZS27N
HZS33N
Fig.1 Zener current Vs. Zener voltage
相关PDF资料 |
PDF描述 |
|---|---|
| HZS30NB1 | 27.69 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS30NB4 | 29.585 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS33NB3 | 31.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS36NB3 | 34.265 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS39NB1 | 35.575 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HZS39NB2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS39NB3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS39NB4 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS3A1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS3A2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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