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参数资料
| 型号： | HZS3.9NB1 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3.875 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | MHD, 2 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 31K |
| 代理商： | HZS3.9NB1 |
HZS-N Series
05
10
15 20 25 30 35 40
Zener Voltage V (V)
Zener
Voltage
Temperature
Coefficient
(%/
°C)
zγ
50
40
30
20
10
0
–10
–20
–30
–40
–50
0.10
0.08
0.06
0.04
0.02
0
–0.02
–0.04
–0.06
–0.08
–0.10
Z
Zener
Voltage
Temperature
Coefficient
(mV/
°C)
zγ
%/
°C
mV/
°C
Fig.2 Temperature Coefficient Vs. Zener voltage
500
400
300
200
100
200
150
100
50
0
Ambient Temperature Ta (
°C)
Power
Dissipation
P
(mW)
d
0
2.5mm
3mm
Printed circuit board
100
180
1.6t mm
Material: paper phenol
×
l
l = 5mm
l = 10mm
(Publication value)
Fig.3 Power Dissipation Vs. Ambient Temperature
相关PDF资料 |
PDF描述 |
|---|---|
| HZS30NB1 | 27.69 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS30NB4 | 29.585 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS33NB3 | 31.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS36NB3 | 34.265 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS39NB1 | 35.575 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HZS39NB2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS39NB3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS39NB4 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS3A1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS3A2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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