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参数资料
| 型号： | HZU11B3L |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 10.9 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ULTRA SMALL, URP, 2 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 88K |
| 代理商： | HZU11B3L |
HZU-L Series
REJ03G0043-0400 Rev.4.00 Oct 29, 2007
Page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V) *
1
Test
Condition
IR (A)
Test
Condition
rd ()
Test
Condition
Type
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZU6A1L
5.2
5.5
HZU6A2L
5.3
5.6
HZU6A3L
5.4
5.7
0.5
1
2.0
150
0.5
HZU6B1L
5.5
5.8
HZU6B2L
5.6
5.9
HZU6B3L
5.7
6.0
0.5
1
2.0
80
0.5
HZU6C1L
5.8
6.1
HZU6C2L
6.0
6.3
HZU6C3L
6.1
6.4
0.5
1
2.0
60
0.5
HZU7A1L
6.3
6.6
HZU7A2L
6.4
6.7
HZU7A3L
6.6
6.9
HZU7B1L
6.7
7.0
HZU7B2L
6.9
7.2
HZU7B3L
7.0
7.3
HZU7C1L
7.2
7.6
HZU7C2L
7.3
7.7
HZU7C3L
7.5
7.9
0.5
1
3.5
60
0.5
HZU9A1L
7.7
8.1
HZU9A2L
7.9
8.3
HZU9A3L
8.1
8.5
HZU9B1L
8.3
8.7
HZU9B2L
8.5
8.9
HZU9B3L
8.7
9.1
HZU9C1L
8.9
9.3
HZU9C2L
9.1
9.5
HZU9C3L
9.3
9.7
0.5
1
6.0
60
0.5
HZU11A1L
9.5
9.9
HZU11A2L
9.7
10.1
HZU11A3L
9.9
10.3
HZU11B1L
10.2
10.6
HZU11B2L
10.4
10.8
HZU11B3L
10.7
11.1
HZU11C1L
10.9
11.3
HZU11C2L
11.1
11.6
HZU11C3L
11.4
11.9
0.5
1
8.0
80
0.5
Note:
1. Tested with DC.
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相关代理商/技术参数 |
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| HZU11C1L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Planar Zener Diode for Low Noise Application |
| HZU11C2L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Planar Zener Diode for Low Noise Application |
| HZU11C3L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Planar Zener Diode for Low Noise Application |
| HZU12 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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