参数资料
型号: IBM0116405P
厂商: IBM Microeletronics
英文描述: 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
中文描述: 4米× 4 12月10日EDO公司的DRAM(1,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
文件页数: 4/31页
文件大小: 556K
代理商: IBM0116405P
IBM0116405
IBM0116405B
4M x 4 12/10 EDO DRAM
IBM0116405M
IBM0116405P
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 4 of 31
28H4720
SA14-4226-06
Revised 4/97
Truth Table
Function
RAS
CAS
WE
OE
Row
Address
Column
Address
I/O0 - I/O3
Standby
H
H
X
X
X
X
X
High Impedance
Read
L
L
H
L
Row
Col
Data Out
Early-Write
L
L
L
X
Row
Col
Data In
Delayed-Write
L
L
H
L
H
Row
Col
Data In
Read-Modify-Write
L
L
H
L
L
H
Row
Col
Data Out, Data In
EDO (Hyper Page) Mode
Read
1st Cycle
L
H
L
H
L
Row
Col
Data Out
2nd Cycle
L
H
L
H
L
N/A
Col
Data Out
EDO (Hyper Page) Mode
Write
1st Cycle
L
H
L
L
X
Row
Col
Data In
2nd Cycle
L
H
L
L
X
N/A
Col
Data In
EDO (Hyper Page) Mode
Read-Modify-Write
1st Cycle
L
H
L
H
L
L
H
Row
Col
Data Out, Data In
2nd Cycle
L
H
L
H
L
L
H
N/A
Col
Data Out, Data In
RAS-Only Refresh
L
H
X
X
Row
N/A
High Impedance
CAS-Before-RAS Refresh
H
L
L
H
X
X
N/A
High Impedance
Hidden Refresh
Read
L
H
L
L
H
L
Row
Col
Data Out
Write
L
H
L
L
L
H
L
Row
Col
Data In
Self Refresh (LP version only)
H
L
L
H
X
X
X
High Impedance
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0117405 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
IBM0117405B 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
IBM0117405M 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
IBM0117405P 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
IBM0117805 2M x 8 11/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带21条地址线,其中11条为行地址选通,10条为列地址选通))
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