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参数资料
| 型号： | IBM43RF1111 |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | SOT-23, 6 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 92K |
| 代理商： | IBM43RF1111 |
IBM43RF1111
SiGe High Dynamic Range 800-2000 MHz Low Noise Amplifier
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 2 of 5
sgrf1111.03
06/24/99
Ordering Information
Part Number
Description
IBM43RF1111
Supplied in Tape and Reel packaging
IBM43RF1111EV19
1900MHz evaluation board for IBM43RF1111
IBM43RF1111EV09
900MHz evaluation board for IBM43RF1111
Operating Conditions (TA = -40 to +85°C)
Symbol
Parameter
Rating
Units
Notes
VCC
Supply Voltage
2.7 to 3.3
V
ICC
Supply Current
7.5
mA
TOPR
Temperature
-40 to +85
°C
1. Operation to 1 volt with external bias.
AC Characteristics (VCC = 3V, TA = 25°C)
Symbol
Parameter
Rating
Units
Notes
F0
Frequency
0.8 to 2
GHz
Insertion Power Gain
900MHz
17
dB
2
1900MHz
11
dB
NF
Noise Figure
1.4
dB
ISWR
Input SWR
<2:1
1
OSWR
Output SWR
<2:1
IIP3
Input Third Order Intercept
+8
dBm
2
Reverse Power Gain
-17
dB
K
Stability
Unconditional
1. Controlled by low Q external matching.
2. Add a small inductance (~0.4 nH) between pin 5 and ground to increase IP3 at the expense of gain. See the application note
Using
the IBM43RF1111EV09 900 MHz Evaluation Board for more information.
S
21
2
S
12
2
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