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参数资料
| 型号： | IC41C82052 |
| 英文描述： | 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 200万× 8（16兆），充满活力和快速页面模式内存 |
| 文件页数： | 15/18页 |
| 文件大小： | 196K |
| 代理商： | IC41C82052 |
IC41C82052
IC41LV82052
6
Integrated Circuit Solution Inc.
DR015-0A 06/12/2001
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tRC
Random READ or WRITE Cycle Time
84
104
ns
tRAC
Access Time from RAS(6, 7)
50
60
ns
tCAC
Access Time from CAS(6, 8, 15)
13
15
ns
tAA
Access Time from Column-Address(6)
25
30
ns
tRAS
RAS Pulse Width
50
10K
60
10K
ns
tRP
RAS Precharge Time
30
40
ns
tCAS
CAS Pulse Width(23)
8
10K
10
10K
ns
tCP
CAS Precharge Time(9)
9
ns
tCSH
CAS Hold Time (21)
38
40
ns
tRCD
RAS to CAS Delay Time(10, 20)
12
37
14
45
ns
tASR
Row-Address Setup Time
0
0
ns
tRAH
Row-Address Hold Time
7
10
ns
tASC
Column-Address Setup Time(20)
0
ns
tCAH
Column-Address Hold Time(20)
8
10
ns
tAR
Column-Address Hold Time
30
40
ns
(referenced to RAS)
tRAD
RAS to Column-Address Delay Time(11)
10
25
12
30
ns
tRAL
Column-Address to RAS Lead Time
25
30
ns
tRPC
RAS to CAS Precharge Time
5
5
ns
tRSH
RAS Hold Time
8
10
ns
tRHCP
RAS Hold Time from CAS Precharge
30
35
ns
tCLZ
CAS to Output in Low-Z(15, 24)
0
ns
tCRP
CAS to RAS Precharge Time(21)
5
ns
tOD
Output Disable Time(19, 24)
315
3
15
ns
tOE
Output Enable Time(15, 16)
12
15
ns
tOED
Output Enable Data Delay (Write)
12
15
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
5
5
ns
tOEP
OE HIGH Pulse Width
10
10
ns
tOES
OE LOW to CAS HIGH Setup Time
5
5
ns
tRCS
Read Command Setup Time(17, 20)
0
ns
tRRH
Read Command Hold Time
0
0
ns
(referenced to RAS)(12)
tRCH
Read Command Hold Time
0
0
ns
(referenced to CAS)(12, 17, 21)
tWCH
Write Command Hold Time(17)
8
10
ns
tWCR
Write Command Hold Time
40
50
ns
(referenced to RAS)(17)
tWP
Write Command Pulse Width(17)
8
10
ns
tWPZ
WE Pulse Widths to Disable Outputs
7
7
ns
tRWL
Write Command to RAS Lead Time(17)
13
15
ns
tCWL
Write Command to CAS Lead Time(17, 21)
8
10
ns
tWCS
Write Command Setup Time(14, 17, 20)
0
ns
tDHR
Data-in Hold Time (referenced to RAS)39
39
ns
相关PDF资料 |
PDF描述 |
|---|---|
| IC41C82052-50J | 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IC42S81600-8T | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IC41C82052-50J | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IC41C82052-50T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IC41C82052-60J | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IC41C82052-60T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IC41C82052S | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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