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| 型号： | ICL7667CBAZA-T |
| 厂商： | Intersil |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 15 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 1240 (CN2011-ZH PDF) |
| 其它名称： | ICL7667CBAZA-TDKR |
ICL7667
Typical Performance Curves (Continued)
100
V+ = 15V
100
10
1
V+ = 5V
10
1
V+ = 15V
V+ = 5V
100μA
C L = 1nF
100mA
C L = 10pF
10k
100k
1M
10M
10k
100k
1M
10M
50
40
FREQUENCY (Hz)
FIGURE 5. I V+ vs FREQUENCY
50
40
FREQUENCY (Hz)
FIGURE 6. NO LOAD I V+ vs FREQUENCY
30
20
10
t f
t D1
30
20
10
t r = T D2
0
C L = 1nF
0
C L = 10pF
5
10
V+ (V)
15
5
10
V+ (V)
15
FIGURE 7. DELAY AND FALL TIMES vs V+
Detailed Description
The ICL7667 is a dual high-power CMOS inverter whose
inputs respond to TTL levels while the outputs can swing as
high as 15V. Its high output current enables it to rapidly
charge and discharge the gate capacitance of power
MOSFETs, minimizing the switching losses in switchmode
power supplies. Since the output stage is CMOS, the output
will swing to within millivolts of both V- and V+ without any
external parts or extra power supplies as required by the
DS0026/56 family. Although most specifications are at
V+ = 15V, the propagation delays and specifications are
almost independent of V+.
In addition to power MOS drivers, the ICL7667 is well suited
for other applications such as bus, control signal, and clock
drivers on large memory of microprocessor boards, where
the load capacitance is large and low propagation delays are
required. Other potential applications include peripheral
power drivers and charge-pump voltage inverters.
4
FIGURE 8. RISE TIME vs V+
Input Stage
The input stage is a large N-Channel FET with a P-Channel
constant-current source. This circuit has a threshold of about
1.5V, relatively independent of the V+ voltage. This means
that the inputs will be directly compatible with TTL over the
entire 4.5V - 15V V+ range. Being CMOS, the inputs draw
less than 1μA of current over the entire input voltage range
of V- to V+. The quiescent current or no load supply current
of the ICL7667 is affected by the input voltage, going to
nearly zero when the inputs are at the 0 logic level and rising
to 7mA maximum when both inputs are at the 1 logic level. A
small amount of hysteresis, about 50mV to 100mV at the
input, is generated by positive feedback around the second
stage.
Output Stage
The ICL7667 output is a high-power CMOS inverter,
swinging between V- and V+. At V+ = 15V, the output
impedance of the inverter is typically 7 Ω . The high peak
FN2853.6
April 29, 2010
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相关代理商/技术参数 |
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| ICL7667CJA | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667CPA | 功能描述:功率驱动器IC DL PWR MOS DRVR COM RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667CPA+ | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667CPAZ | 功能描述:功率驱动器IC W/ANNEAL DL PWR MOS DRVR COM RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667CTV | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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