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| 型号： | ICS830154AMI-08LFT |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC CLOCK BUFFER 1:4 160MHZ 8SOIC |
| 标准包装： | 2,500 |
| 系列： | HiPerClockS™ |
| 类型： | 扇出缓冲器（分配） |
| 电路数： | 1 |
| 比率 - 输入:输出： | 1:4 |
| 差分 - 输入:输出： | 无/无 |
| 输入： | LVCMOS |
| 输出： | LVCMOS |
| 频率 - 最大： | 160MHz |
| 电源电压： | 1.4 V ~ 3.465 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
ICS830154AGI-08 REVISION A MARCH 29, 2010
12
2010 Integrated Device Technology, Inc.
ICS830154I-08 Data Sheet
OVER-VOLTAGE TOLERANT 1.5V, 1:4 FANOUT BUFFER
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS830154I-08.
Equations and example calculations are also provided.
1.
Power Dissipation.
The total power dissipation for theICS830154I-08 is the sum of the core power plus the power dissipation in the load(s). The following is the
power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results.
Power (core)MAX = VDD_MAX * IDD_MAX = 3.465V *1mA = 3.465mW
Total Static Power:
= Power (core)MAX = 3.465mW
Dynamic Power Dissipation at FOUT_MAX (160MHz)
Total Power (160MHz) = [(CPD * N) * Frequency * (VDDO)
2] = [(14pF *4) * 160MHz * (3.465V)2] = 107.6mW
N = number of outputs
Total Power
= Static Power + Dynamic Power Dissipation
= 3.465mW + 107.6mW
= 111.065mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
θ
JA * Pd_total + TA
Tj = Junction Temperature
θ
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
θ
JA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 121.5°C/W per Table 6A below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.111W *121.5°C/W = 98.5°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 6A. Thermal Resistance θJA for 8 Lead TSSOP, Forced Convection
Table 6B. Thermal Resistance θJA for 8 Lead SOIC, Forced Convection
θ
JA by Velocity
Meters per Second
01
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
121.5°C/W
117.3°C/W
115.3°C/W
θ
JA by Velocity
Meters per Second
01
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
103°C/W
94°C/W
89°C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ICS830154I-08 | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:Over-Voltage Tolerant 1.5V, 1:4 Fanout Buffer |
| ICS8302 | 制造商:ICS 制造商全称:ICS 功能描述:LOW SKEW, 1-TO-2 LVCMOS / LVTTL FANOUT BUFFER |
| ICS8302-01 | 制造商:ICS 制造商全称:ICS 功能描述:LOW SKEW, 1-TO-2 LVCMOS / LVTTL FANOUT BUFFER W/ COMPLEMENTARY OUTPUT |
| ICS83021AMI | 制造商:ICS 制造商全称:ICS 功能描述:2.5V, 3.3V DIFFERENTIAL-TO-LVCMOS/LVTTL TRANSLATOR |
| ICS83021AMILF | 功能描述:IC CLK BUFFER DVR TRANSLA 8-SOIC RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 时钟缓冲器，驱动器 系列:HiPerClockS™ 产品培训模块:High Bandwidth Product Overview 标准包装:1,000 系列:Precision Edge® 类型:扇出缓冲器（分配） 电路数:1 比率 - 输入:输出:1:4 差分 - 输入:输出:是/是 输入:CML，LVDS，LVPECL 输出:CML 频率 - 最大:2.5GHz 电源电压:2.375 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VFQFN 裸露焊盘，16-MLF? 供应商设备封装:16-MLF?（3x3） 包装:带卷 (TR) |
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