参数资料
型号: ICS854S006AGILF
厂商: IDT, Integrated Device Technology Inc
文件页数: 3/15页
文件大小: 0K
描述: IC CLK BUFFER 1:6 1.7GHZ 24TSSOP
特色产品: LVDS Buffers and Muxes
标准包装: 62
系列: HiPerClockS™
类型: 扇出缓冲器(分配)
电路数: 1
比率 - 输入:输出: 1:6
差分 - 输入:输出: 是/是
输入: HCSL,LVDS,LVHSTL,LVPECL,SSTL
输出: LVDS
频率 - 最大: 1.7GHz
电源电压: 2.375 V ~ 3.465 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 24-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 24-TSSOP
包装: 管件
其它名称: 854S006AGILF
ICS854S006AGILF-ND
ICS854S006AGI REVISION B JANUARY 18, 2010
11
2010 Integrated Device Technology, Inc.
ICS854S006I Data Sheet
LOW SKEW, 1-TO-6, DIFFERENTIAL-TO-LVDS FANOUT BUFFER
POWER CONSIDERATIONS
This section provides information on power dissipation and junction temperature for the ICS854S006I.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the ICS854S006I is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
Power (core)
MAX
= V
DD_MAX
* I
DD_MAX
= 3.465V * 55mA = 190.575mW
Power (outputs)
MAX
= V
DDO_MAX
* I
DDO_MAX
= 3.465V * 105mA = 363.825mW
Total Power
_MAX
= 190.575mW + 363.825mW = 554.4mW
2. Junction Temperature.
Junction temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C
ensures that the bond wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
θ
JA * Pd_total + TA
Tj = Junction Temperature
θ
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
θ
JA must be used.
Assuming no air flow and a multi-layer board, the appropriate value is 70°C/W per Table 6 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.554W * 70°C/W = 123.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air
flow, and the type of board (single layer or multi-layer).
TABLE 6. THERMAL RESISTANCE
θθθθθ
JA
FOR
24-LEAD TSSOP, FORCED CONVECTION
θθθθθ
JA
by Velocity (Meters per Second)
0
1
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
70°C/W
65°C/W
62°C/W
相关PDF资料
PDF描述
ICS854S01AKILF IC CLOCK MUX 2:1 2.5GHZ 16-QFN
ICS854S036AKLFT IC CLK BUFF 1:3/1:6 2GHZ 32VFQFN
ICS854S54AYI-08LF IC CLK BUFF MUX 2:1/1:2 64-TQFP
ICS86004BGILF IC CLK BUFFER ZD 1:4 16-TSSOP
ICS8633AF-01LFT IC BUFFER ZD 2-3 LVPECL 28-SSOP
相关代理商/技术参数
参数描述
ICS854S006AGILFT 功能描述:IC CLK BUFF 1:6 1.7GHZ 24-TSSOP RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 时钟缓冲器,驱动器 系列:HiPerClockS™ 标准包装:74 系列:- 类型:扇出缓冲器(分配) 电路数:1 比率 - 输入:输出:1:10 差分 - 输入:输出:是/是 输入:HCSL, LVCMOS, LVDS, LVPECL, LVTTL 输出:HCSL,LVDS 频率 - 最大:400MHz 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:32-VFQFN 裸露焊盘 供应商设备封装:32-QFN(5x5) 包装:管件
ICS854S015CKI-01LF 制造商:Integrated Device Technology Inc 功能描述:IC FANOUT BUFFER 24VFQFN
ICS854S015CKI-01LFT 制造商:Integrated Device Technology Inc 功能描述:IC FANOUT BUFFER 24VFQFN
ICS854S01AKILF 功能描述:IC CLOCK MUX 2:1 2.5GHZ 16-QFN RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 时钟缓冲器,驱动器 系列:HiPerClockS™ 产品培训模块:High Bandwidth Product Overview 标准包装:1,000 系列:Precision Edge® 类型:扇出缓冲器(分配) 电路数:1 比率 - 输入:输出:1:4 差分 - 输入:输出:是/是 输入:CML,LVDS,LVPECL 输出:CML 频率 - 最大:2.5GHz 电源电压:2.375 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VFQFN 裸露焊盘,16-MLF? 供应商设备封装:16-MLF?(3x3) 包装:带卷 (TR)
ICS854S036AKLFT 功能描述:IC CLK BUFF 1:3/1:6 2GHZ 32VFQFN RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 时钟缓冲器,驱动器 系列:HiPerClockS™ 产品培训模块:High Bandwidth Product Overview 标准包装:1,000 系列:Precision Edge® 类型:扇出缓冲器(分配) 电路数:1 比率 - 输入:输出:1:4 差分 - 输入:输出:是/是 输入:CML,LVDS,LVPECL 输出:CML 频率 - 最大:2.5GHz 电源电压:2.375 V ~ 2.625 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VFQFN 裸露焊盘,16-MLF? 供应商设备封装:16-MLF?(3x3) 包装:带卷 (TR)