参数资料
型号: ICSSSTUAF32868BHLFT
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: 锁存器
英文描述: 32868 SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA176
封装: LEAD FREE, MO-205/MO-255/MO-246, LFBGA-176
文件页数: 2/22页
文件大小: 538K
代理商: ICSSSTUAF32868BHLFT
ICSSSTUAF32868B
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
COMMERCIAL TEMPERATURE GRADE
28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2
10
ICSSSTUAF32868B
7102/2
Absolute Maximum Ratings
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Output Buffer Characteristics
Output edge rates over recommended operating free-air temperature range
Item
Rating
Supply Voltage, VDD
-0.5V to 2.5V
Input Voltage Range, VI1
1
The input and output negative voltage ratings may be exceeded if the ratings of the I/P and
O/P clamp current are observed.
-0.5V to VDD + 2.5V
Output Voltage Range, VO1,2
2
This current will flow only when the output is in the high state level VO > VDDQ.
-0.5V to VDDQ + 0.5V
Input Clamp Current, IIK
±50mA
Output Clamp Current, IOK
±50mA
Continuous Output Clamp Current, IO
±50mA
Continuous Current through each VDD or GND
±100mA
Package Thermal Impedance (
θja)3
3
The package thermal impedance is calculated in accordance with JESD 51.
0m/s Airflow
40.4
°C/W
1m/s Airflow
29.1
°C/W
Storage Temperature
-65 to +150
°C
Parameter
VDD = 1.8V ± 0.1V
Units
Min.
Max.
dV/dt_r
1
4
V/ns
dV/dt_f
1
4
V/ns
dV/dt_
Δ1
1
Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate).
1V/ns
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